Breakdown Phenomena In Semiconductors And Semiconductor Devices.
Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to pr...
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| Online Access: |
Full text (MCPHS users only) |
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| Main Author: | |
| Other Authors: | , |
| Format: | Electronic eBook |
| Language: | English |
| Published: |
Singapore :
World Scientific,
2005
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| Subjects: | |
| Local Note: | ProQuest Ebook Central |
| Summary: | Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices. The aim of this book is to summarize the main experi. |
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| Physical Description: | 1 online resource (223 pages) |
| ISBN: | 9789812703330 9812703330 |
| Source of Description, Etc. Note: | Print version record. |
