Fundamentals of Electronics 1 : Electronic Components and Elementary Functions.
Electronics has undergone important and rapid developments over the last 60 years, which have generated a large range of theoretical and practical notions. This book presents a comprehensive treatise of the evolution of electronics for the reader to grasp both fundamental concepts and the associated...
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| Format: | Electronic eBook |
| Language: | English |
| Published: |
Newark :
John Wiley & Sons, Incorporated,
2017
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| Local Note: | ProQuest Ebook Central |
Table of Contents:
- Cover; Half-Title Page; Title Page; Copyright Page; Contents; Preface; Outline; Introduction; 1. Diodes and Applications; 1.1. Semiconductor physics and current transport in pn diodes; 1.1.1. Energy and concentration of mobile charge carriers (electrons and holes); 1.1.2. Conduction mechanisms; 1.2. Simplified models of the pn diode; 1.3. Diode circuitry (reviewed in exercises); 1.4. Detailed model of pn diode: variable conditions and effect of temperature; 1.4.1. Junction at equilibrium (at zero voltage or in open circuit): diffusion potential.
- 1.4.2. Biased junction (or out of equilibrium): effect of an external potential difference1.4.3. Effects of temperature; 1.4.4. Capacitive effects; 1.5. Different types of diode and their functions; 1.5.1. Zener diode; 1.5.2. Schottky diode or metal-semiconductor diode; 1.5.3. Light emitting diodes and laser diodes; 1.5.4. Photodiodes and photovoltaic generators; 1.6. Exercises; 1.6.1. Analyze the operation of the following circuits for a sinusoidal voltage generator and ideal diodes (a) with no threshold and (b) with a threshold U0.
- 1.6.2. Study of the current variations in a forward biased pn diode under influence of temperature1.6.3. Analog switch; 1.6.4. Ring modulator; 1.6.5. Switching diode: study on opening; 2. Bipolar Junction Transistors and Applications; 2.1. The transistor effect; 2.2. Bipolar junction transistor (or BJT) models and types; 2.2.1. Ebers-Moll model; 2.2.2. The heterojunction bipolar transistor (or HBT) and transistors based on III-V semiconductors; 2.3. Bipolar junction transistor in static regimes and applications of the exponential characteristic IC(VBE).
- 2.3.1. Equivalent circuits for the three operating regimes2.3.2. Nonlinear applications: differential pairs and multiplier; 2.3.3. Circuits for transistor bias: current sources and current mirrors; 2.3.4. Voltage limitations; 2.4. Small-signal dynamic circuits (linear approximation); 2.4.1. Basic circuits; 2.4.2. Small-signal high-frequency equivalent circuit; 2.5. Power amplification: classes of amplification; 2.6. Bipolar transistor switching on resistive loads; 2.7. Components based on the pnpn structure; 2.7.1. pnpn diode (or Shockley diode); 2.7.2. Controlled rectifier or thyristor.
- 2.7.3. Diacs and triacs2.8. Phototransistors and optically controlled components; 2.9. Exercises; 2.9.1. Class A amplification; 2.9.2. 4 Quadrant multiplier; 2.9.3. Amplifiers with rest current zero or low relative to nominal current; 2.9.4. Cascode circuit and frequency responses of transistor amplifiers; 3. Field Effect Transistors and Applications; 3.1. Operating principle of junction field effect transistors (JFET and MESFET types); 3.2. Metal oxide semiconductor field effect transistors; 3.3. Types of field effect transistors and equivalent circuits; 3.3.1. JFETs, MESFETs and MOSFETs.
