Ion Implantation and Activation - Volume 3.

Ion Implantation and Activation presents the derivation process of related models in a comprehensive step by step manner starting from the fundamental processes and moving up into the more advanced theories. Chapters in the book explain, in depth, various topics such as Pearson functions, LSS theory...

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Bibliographic Details
Online Access: Full text (MCPHS users only)
Main Author: Suzuki, Kunihiro
Format: Electronic eBook
Language:English
Published: Sharjah : Bentham Science Publishers, 2013
Series:Ion Implantation and Activation.
Subjects:
Local Note:ProQuest Ebook Central

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245 1 0 |a Ion Implantation and Activation - Volume 3. 
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300 |a 1 online resource (212 pages) 
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504 |a Includes bibliographical references and index. 
505 0 |a Cover; Title; EUL; Contents; Preface; Acknowledgement; Chapter 01; Chapter 02; Chapter 03; Chapter 04; Chapter 05; Chapter 06; Chapter 07; Index. 
520 |a Ion Implantation and Activation presents the derivation process of related models in a comprehensive step by step manner starting from the fundamental processes and moving up into the more advanced theories. Chapters in the book explain, in depth, various topics such as Pearson functions, LSS theory, Monte Carlo simulations, Edgeworth Polynomials and much more. This book provides advanced engineering and physics students and researchers with complete and coherent coverage of modern semiconductor process modeling. 
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650 0 |a Ion accelerators. 
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