Transient-induced latchup in CMOS integrated circuits

Transient-induced latchup in CMOS integrated circuits /

"Transient-Induced Latchup in CMOS Integrated Circuits equips the practicing engineer with all the tools needed to address this regularly occurring problem while becoming more proficient at IC layout. Ker and Hsu introduce the phenomenon and basic physical mechanism of latchup, explaining the c...

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Bibliographic Details
Online Access: Full text (MCPHS users only)
Main Author: Ker, Ming-Dou
Other Authors: Hsu, Sheng-Fu
Format: Electronic eBook
Language:English
Published: [Piscataway, NJ] : Singapore ; Hoboken, NJ : IEEE Press ; John Wiley & Sons (Asia), 2009
Subjects:
Metal oxide semiconductors, Complementary > Defects.
Metal oxide semiconductors, Complementary > Reliability.
Local Note:ProQuest Ebook Central

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